Silicon Sputtering Target

For more than 40 years, Sil'tronix Silicon Technologies produces its own monocrystalline silicon ingot in order to provide the highest quality for photonic applications. 


The whole Si crystals are made internally within our own factory in order to provide the flexibility requested regarding the application. We use exclusively pure silicon (9N) in order to maintain a reliable and qualitative consistency. Our purpose is to make high value products regarding individual specification to meet every user's requirement with the highest quality level.

Sil'tronix ST is specialized in producing high purity monocrystalline Silicon sputtering targets with the highest density and smallest average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications.

Monocrystalline Silicon sputtering targets capabilities

Our standard Silicon Sputtering Targets for thin film are available in monocrystalline silicon, dimensions up to 150 mm with hole drill locations and threading, beveling, grooves and backing designed to work with both older sputtering devises as well as the latest process equipment, such as large area coating for solar energy or fuel cells and flip-chip applications.

We have the particularity to provide as per customer need, any shape of silicon sputtering targets such as rectangular, annular or oval.
Research sized targets are also produced as well as custom sizes. All targets are analyzed using best demonstrated techniques including X-Ray Fluorescence (XRF), Glow Discharge Mass Spectrometry (GDMS), and Inductively Coupled Plasma (ICP).
We can also provide targets outside this range in addition to just about any size rectangular, annular, or oval target.

Our products can be manufactured according to your specifications.

Standard Specifications

Doping P- Type  N-type Intrinsic
Orientation (100) Any orientation are available on request
Resistivity 10-50 ohm/cm Any resistivity are available on request
Diameter from 10 to 150mm
Thickness from 0.5mm up to 10 mm
Surface Simply etched Top side optical polished
Quality Inspection, cleaned for use in vacuum

Further data:

    • Theoretical Density: 2.33g/cm3
    • Thermal Conductivity (20°C): 125.6W/m.K
    • Thermal Expansion (0°C): 2.6 10-6/K
    • Melting point 1410°C


Silicon wafer stock


Silicon wafer configurator


SOI wafer configurator



Brochure Silicon wafers.pdf application/pdf

Brochure Thin silicon wafers.pdf application/pdf

Brochure Additional layers.pdf application/pdf

Brochure Services.pdf application/pdf