Silicon parts, standard dicing

For standard thicknesses from 150 µm to 1 mm, silicon wafers can be cut in small pieces with high precision (± 0.02 mm).

During the dicing operation the wafer is typically mounted on blue tape, yielding to the minimisation of particles. The area that has been cut away and called “die streets” are typically about 75µm wide.

The minimum dicing size is 1,5 x 1.5 mm up to 100 x 100 mm for square wafers.

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Sil’tronix ST will be present on the next biannual Porous Semiconductors Science and Technology (PSST) Conference organized in La grade Motte (France) from the 11th to 16th March.

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Credit: University of Surrey

An international team of scientists, led by the University of Surrey, has discovered a new type of silicon that could be used to control light beams in a new kind of photonic chip – a chipset where information is carried by light beams rather than electrical currents.

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For more than 40 years, Sil’tronix ST manufactures customized silicon wafers regarding your own specifications.

From the raw material to growth the monocrystalline ingot up to the cleaning process, each step are handled within our factory in order to provide the reliability requested to ensure the achievement of your topics.

This video aims to show the whole capabilities provided to manufacture your specific Si wafers:

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Crystal characterized with X-ray topography from Sil’tronix ST and another supplier.

The topographers are recorded to a 20 keV photon energy and show a 40 mm long section of the 120 mm long crystals installed as a second crystal in a double crystal monochromator.

Both crystals show a very good crystallinity. The Si crystal from Sil’tronix ST is almost free of defects, while the one from the other supplier shows scratches on the surface, most probably due to the polishing process.

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Silicon wafer Orientations

Silicon crystals are characterized by an orderly array of their atoms. In monocrystalline crystals, this arrangement is the same wherever the zone within the crystal.

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In order to provide reliable and qualitative products, Sil’tronix ST manufactures its own products totally internally throughout its factory between Mont Blanc and Geneva for more than 40 years.

To produce silicon wafers or silicon crystals from the pulling process, we observe the production flow below.

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We are now able to provide hybrid wafers i.e., a wafer substrate with one or several crystal thin films of quartz, PZT, lithium niobate, etc.

Processes based on crystal growth and on ion implantation have been developed to produce thin films. However, these technologies present some technological limits: all materials cannot be processed, obtaining thin films presenting the same properties as bulk materials is difficult and the layer thickness is limited to a few microns.

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Newsletter June

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In order to study the internal friction of thin films a nodal suspension system called GeNS (Gentle Nodal Suspension) has been developed. The key features of this system are: i) the possibility to use substrates easily available like silicon wafers; ii) extremely low excess losses coming from the suspension system which allows to measure Q factors in excess of 2x108 on 3” diameter wafers; iii) reproducibility of measurements within few percent on mechanical losses and 0.01% on resonant frequencies; iv) absence of clamping; v) the capability to operate at cryogenic temperatures. Measurements at cryogenic temperatures on SiO2 and at room temperature only on Ta2O5 films deposited on silicon are presented.

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For more than 40 years, Sil'tronix ST is specialized in the manufacture of customized silicon wafers. Our purpose is to answer the most efficiently to your needs generated by your researches.

For this reason, we provide a large range of thin films and metallization in order to propose not only a substract but a complete solution...

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For more than 40 years, Sil'tronix ST is specialized in the manufacturing of full custom Silicon wafers. In order to go further and provide you a complete solution to succeed within your topics, we offer the possibility to perform a transmittance on silicon up to 100%

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