1) Synthesis of vertically-aligned GaAs nanowires on GaAs/(111)Si hetero-substrates by metalorganic vapour phase epitaxy
I Micoli et al. Cryst. Res. Technol., 2011, 46, pg 795
2) The 100th anniversary of the four-point probe technique: The role of probe geometries in isotropic and anisotropic systems
    I Miccoli et al 2015 J. Phys.: Condens. Matter 27 223201
3) Mass-transport driven growth dynamics of AlGaAs shells deposited around dense GaAs nanowires by metalorganic vapor phase epitaxy
    I Miccoli et al, CrystEngComm, 2015,17, 5998-6005
4) Interwire coupling for In(4×1)/Si(111) probed by surface transport
    F. Edler et al., Phys. Rev. B 92, 085426


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A team of scientists from Lobachevsky University (Nizhny Novgorod, Russia) has obtained a material with a new structure for applications in next-generation optoelectronics and photonics. This material is one of the hexagonal modifications of silicon, which have better radiative properties compared to conventional cubic silicon, which is traditionally used in microelectronics.

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