Silicon Sputtering Targets

Sil'tronix specializes in producing high purity monocrystalline Silicon sputtering targets with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications.
 
Our standard Silicon Sputtering Targets for thin film are available in monocrystalline mono-block, dimensions up to 150 mm with hole drill locations and threading, beveling, grooves and backing designed to work with both older sputtering devises as well as the latest process equipment, such as large area coating for solar energy or fuel cells and flip-chip applications.
 
Research sized targets are also produced as well as custom sizes. All targets are analyzed using best demonstrated techniques including X-Ray Fluorescence (XRF), Glow Discharge Mass Spectrometry (GDMS), and Inductively Coupled Plasma (ICP).
 
We can also provide targets outside this range in addition to just about any size rectangular, annular, or oval target.

Our products can be manufactured according to your specifications.Sil'tronix-Silicon Sputtering targets.JPG

Standard Specifications:

  • Crystal: Very high Purity Si
  • Doping: P-type,N-type or Intrinsec
  • Orientation: <100>, however any other orientations are possible
  • Resistivity: 10-50 ohm/cm, any other resistivity is possible
  • Size:
    Diameter: from 10 to 150mm
    Thickness: from 0.5mm up to 10 mm
  • Surface: simply etched or top side optical polished
  • Quality: Inspection, cleaned for use in vacuum.
  • Packing: Packing costs are included in the price

Other data:
Theoretical Density: 2.33g/cm3
Thermal Conductivity (20°C): 125.6W/m.K
Thermal Expansion (0°C): 2.6 10-6/K
Melting point 1410°C

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Newsletter June

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In order to study the internal friction of thin films a nodal suspension system called GeNS (Gentle Nodal Suspension) has been developed. The key features of this system are: i) the possibility to use substrates easily available like silicon wafers; ii) extremely low excess losses coming from the suspension system which allows to measure Q factors in excess of 2x108 on 3” diameter wafers; iii) reproducibility of measurements within few percent on mechanical losses and 0.01% on resonant frequencies; iv) absence of clamping; v) the capability to operate at cryogenic temperatures. Measurements at cryogenic temperatures on SiO2 and at room temperature only on Ta2O5 films deposited on silicon are presented.

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