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Crystal characterized with X-ray topography from Sil’tronix ST and another supplier.

The topographers are recorded to a 20 keV photon energy and show a 40 mm long section of the 120 mm long crystals installed as a second crystal in a double crystal monochromator.

Both crystals show a very good crystallinity. The Si crystal from Sil’tronix ST is almost free of defects, while the one from the other supplier shows scratches on the surface, most probably due to the polishing process.

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Silicon wafer Orientations

Silicon crystals are characterized by an orderly array of their atoms. In monocrystalline crystals, this arrangement is the same wherever the zone within the crystal.

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In order to provide reliable and qualitative products, Sil’tronix ST manufactures its own products totally internally throughout its factory between Mont Blanc and Geneva for more than 40 years.

To produce silicon wafers or silicon crystals from the pulling process, we observe the production flow below.

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We are now able to provide hybrid wafers i.e., a wafer substrate with one or several crystal thin films of quartz, PZT, lithium niobate, etc.

Processes based on crystal growth and on ion implantation have been developed to produce thin films. However, these technologies present some technological limits: all materials cannot be processed, obtaining thin films presenting the same properties as bulk materials is difficult and the layer thickness is limited to a few microns.

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Newsletter June

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In order to study the internal friction of thin films a nodal suspension system called GeNS (Gentle Nodal Suspension) has been developed. The key features of this system are: i) the possibility to use substrates easily available like silicon wafers; ii) extremely low excess losses coming from the suspension system which allows to measure Q factors in excess of 2x108 on 3” diameter wafers; iii) reproducibility of measurements within few percent on mechanical losses and 0.01% on resonant frequencies; iv) absence of clamping; v) the capability to operate at cryogenic temperatures. Measurements at cryogenic temperatures on SiO2 and at room temperature only on Ta2O5 films deposited on silicon are presented.

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The silicon wafers storage (or other materials) perfectly polished must be inventoried in controlled atmosphere area (Ideally in clean room) as soon as they are out from there double packaging sealed in clean room.

Actually, in uncontrolled atmosphere area, there are always a residual particulate contamination which changes depending the geographic situation.

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The Czochralski (Cz) Pulling process to achieve Silicon wafers and Silicon crystals

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Have a look to our newsletter of March !

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The field of applications for monocrystalline silicon are always more numerous. On side of classical fields such as microelectronics or micromechanics, new industries such as biotechnologies or watch makers use silicon wafers with different characteristics for different needs than standard wafers.

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news

Crystal characterized with X-ray topography from Sil’tronix ST and another supplier.

The topographers are recorded to a 20 keV photon energy and show a 40 mm long section of the 120 mm long crystals installed as a second crystal in a double crystal monochromator.

Both crystals show a very good crystallinity. The Si crystal from Sil’tronix ST is almost free of defects, while the one from the other supplier shows scratches on the surface, most probably due to the polishing process.

Read more

Silicon wafer Orientations

Silicon crystals are characterized by an orderly array of their atoms. In monocrystalline crystals, this arrangement is the same wherever the zone within the crystal.

Read more

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