Services

Sil’tronix ST is a leading manufacturer of high quality customized silicon wafers and crystals. All Si wafers are made internally from the pulling process (to create specific ingot) toward the cleaning in order to maintain a reliable and qualitative consistency.

In order to provide you the maximum of services to succeed to your topics, we share our knowledge and tools.

From your own Silicon ingot, own silicon wafer, silicon crystal or semi-finished products, we are able to provide you the services as described below.

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CZ SPECIFIC INGOT

  • Charlotte-Le-Mesle-Photographe-Sil-Tronix-ST-Transformation-Lingot-1.jpgOrientation: (100) or (111)  
  • Dopant: P-Boron or N-Phosphorus
  • From conductive materials closed to 1 mOhm.cm
  • Undoped: no added dopant

High purity silicon (purity 9N) is melted in a crucible at 1425°C, usually made of quartz. A precisely oriented seed silicon crystal is dipped into the molten silicon. The seed crystal’s rod is slowly pulled upwards and rotated simultaneously...

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Downsizing – Edge grinding

To match your own specification, we downsize silicon wafers on the size requested

  • Charlotte-Le-Mesle-Photographe-Sil-Tronix-ST-Downsizing.jpgDownsizing with different tools laser cutting (ie: 6" -> 3x2")
  • Round, flat, edge grinding
  • Specific edge profile: cutting 45° angle

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Mirror and Silicon Blocks Refurbishment

Silicon Block Refurbishment 2- Sil'tronix.jpgThe quality of x-ray mirrors produced today is significantly better than that which was available 10 years ago. Consequently, there are many large optics installed worldwide with slope and roughness characteristics that can be improved. In addition mirror coatings degrade (surface contamination) over time resulting in performance reduction


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news

Newsletter June

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In order to study the internal friction of thin films a nodal suspension system called GeNS (Gentle Nodal Suspension) has been developed. The key features of this system are: i) the possibility to use substrates easily available like silicon wafers; ii) extremely low excess losses coming from the suspension system which allows to measure Q factors in excess of 2x108 on 3” diameter wafers; iii) reproducibility of measurements within few percent on mechanical losses and 0.01% on resonant frequencies; iv) absence of clamping; v) the capability to operate at cryogenic temperatures. Measurements at cryogenic temperatures on SiO2 and at room temperature only on Ta2O5 films deposited on silicon are presented.

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