Silicon wafer specifications

Specifications

Sil’tronix ST is a leading manufacturer of high quality customized silicon wafers in all diameters. All Si wafers are made internally from the pulling process (to create specific ingot) toward the cleaning with pure silicon (9N) in order to maintain a reliable and qualitative consistency. Our purpose is to make high value products regarding individual specification to meet every user's requirement with the highest quality level.

All wafers are built only upon request to match tight mechanical and electrical parameters specifications according to SEMI standards.

We provide mainly Prime wafers (Either Czochralski (CZ) or Float Zone (FZ)) which is the highest grade for commercial silicon wafers (test wafers are available on request). This makes allowance to any research center, laboratory or university to build the latest technology on the wafers, generally forming circuit pattern, MEMS, manufacturing devices…

 

Diameter

1 inch (25.4mm)

2 inch (50.8mm)

3 inch (76.2mm)

4 inch (100mm)

5 inch
(125mm)

6 inch

(150mm)

Further diameters on request

Type & dopant

N-type: P (Phosphorus), Sb (Antimony), As (Arsenic)

P-type: B (Boron)

Undoped

Resistivity

Czochralski (CZ): from 1mOhm.cm to 150 Ohm.cm

 Float Zone (FZ): up to 10K Ohm.cm

Standard Orientation

(100) (110) (111)

Optional Orientation

(211) (311) (411) (511) (711) (911)
(210) (310) (510) (910)
(531) (731)

Tolerance 

 Standard: ± 0.5°

 Option: ± 0.01°

Off orientation 

 Up to 40°

Thickness

1"

2"

3"

4"

5"

6"

Standard (µm) 

250

275

380

525

625

675

Tolerance (± µm) 

15

25

25

20

20

20

On request 

 From 120µm to 15mm

Surface

As Cut

Lapped

Etched

Single side polished

Double side polished

Additional specification

1"

2"

3"

4"

5"

6"

Particle count

10-25

10-25

10-25

<10

<15

<15

TTV Std (µm)

<10

<10

<10

<10

<10

<10

TTV min SSP (µm)

5

5

5

5

10

10

TTV min DSP (µm)

3

3

3

3

3

3

Bow (µm)

<30

<30

<30

<30

<40

<40

Roughness

 On polished surface: <1nm

Flatness

 On polished surface: <1µm

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