Silicon oxide wafer SIO2 thin fim

In semiconductor technology, SiO2 thin film layers are mainly used as dielectric material and more recently, they are also integrated in MEMS (Micro Electro Mechanical Systems) devices. The simplest way to produce silicon oxide layers on silicon wafers is to oxidize silicon with oxygen.

Dry and wet thermal oxidation of silicon wafer

The growth of a silicon oxide layer on a silicon surface (SiO2) can be carried out via high dry or wet oxidation processes. In both cases, silicon reacts with oxygen leading to a moving interface towards the substrate.

We supply silicon wafers from 2 to 6" with


  • Dry SiO2 films from 20 to 500 nm
  • Roughness less than 3 Angstroms RMS
  • Wet thermal oxide from 50 nm up to 2 µm.

We accommodate all quantities, with a minimum batch order of 25 wafers.

Dry oxidation typically takes place at temperatures in between 850 and 1200°C and it demonstrates low growth rates. It does allow very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.

Sil'tronix-SiO2-thermal oxyde layer-MEB.PNG


Single side silicon oxide wafer

Usually, thermal oxidation is made on both faces of a silicon wafer. To get only one side oxidized, a protection can be used on one side. The opposite side is then dissolved in BHF. As the thermal oxidation is made by run of 25 to 50 wafers and since the dissolution is made wafer by wafer, double and single side silicon oxide wafers can be purchase in the same batch.