Silicon Wafer

For more than 40 years, Sil'tronix Silicon Technologies aims to manufacture monocrystalline silicon wafer. We manage the whole manufacturing process by the achievement of the entirely production within our own factory. The fabrication is totally made internally from the pulling process to get the ingot up to the final step which is the cleaning process. This production flow allows to maintain a reliable and qualitative consistency.

The major source of motivation for the company is to provide the most suitable silicon wafers regarding the customer requirement. It is the reason we manufacture the products on demand regarding individual specification (size, off cut, accurate resistivity… ).

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We produce any diameters from 1’’ (25.4 mm) to 6’’ (152.4 mm) in order to provide the most flexibility as possible. With the aim of providing the largest range of specification, we work either Cz (Czochralski) or FZ (Float Zone) silicon wafers. Furthermore, in order to manufacture qualitative products, pure silicon (9N) raw material is used.

The polishing process is also made internally in order to meet or exceed the Semiconductor Equipment and Materials International standards (SEMI).

With the aim to provide more services and answer to your requirements even more quickly, we maintain a large inventory of Cz, FZ, low defect, ultra-flat and ultra-thin wafers.

SILICON WAFER SPECIFICATION

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We manufacture your own silicon wafers from 1 inch to 6 inches regarding your individual technical specification. We answer to the most complex requests by manufacturing customized wafers while respecting each needs as well as: diameter, type & dopant, resistivity, orientation, thickness, etc...

Read more about silicon wafer specifications

Silicon oxide wafer SiO2 Thin film

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Sil’tronix Silicon Technologies provides thermal dry SiO2 layers from 15 nm up to 300 nm totally made internally. Greater thicknesses are also available on request. The quality provided allows to use the thin layer for graphene purpose.

Read more about SiO2 thin film specifications

Silicon nitride wafer Si3N4 thin fiLm

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Sil'tronix ST provides silicon nitride layers from 100 nm up to 500 nm, on top of any wafers. LPCVD or Low stress (Ultra-low stress) processes are used depending the individual specification.

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thin film Deposition and metallization on silicon wafers

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Oxidation, nitridation and metal coating are available on the same silicon wafer. Different additional layers are available on request for one or double sides. We have the capabilities to add different layers on different sides of a same wafer.

Read more about additional layers specifications

Downsizing - Edge grinding

Due to a large range of topics, we provide the service to downisize your own wafers (silicon, SOI, ...) in order to match your needs and supply the size requested to succeed within your topics. Regardless the shape, we are able to provide any kind of forms.

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With the aim to provide the same level of quality as a new wafer, we follow a strict process:

  • Downsizing by laser cutting (ie: 6" -> 3x2")
  • Round, flat, edge grinding
  • Specific edge profile: cutting 45° angle

    Read More about downsizing

 

SERVIces

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In order to provide the maximum of services, Sil’tronix ST built its manufacturing line in production cells. Each step is available to include semi-finished products for the purpose of adding the necessary steps to succeed within your topics.

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